Size and density control of silicon oxide nanowires by rapid thermal annealing and their growth mechanism

Applied Physics A: Materials Science and Processing

Volumn 94, Issue 2, 2009, Pages 357-363

  Lai, Yi Sheng ^a   Wang, Jyh Liang ^b   Liou, Sz Chian ^c   Tu, Chia Hsun ^d  

^a NATIONAL UNITED UNIVERSITY   (Taiwan)

^b MING CHI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^d The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC WIRE; ELECTRON ENERGY LOSS SPECTROSCOPY; EMISSION SPECTROSCOPY; ENERGY DISSIPATION; FIELD EMISSION; GROWTH (MATERIALS); HIGH RESOLUTION ELECTRON MICROSCOPY; IMAGE ENHANCEMENT; NANOWIRES; PLATINUM; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICA; SILICON; SILICON COMPOUNDS; WIRE;

DENSITY CONTROLS; ELEMENTAL MAPPINGS; FIELD EMISSION SCANNING ELECTRON MICROSCOPIES; GROWTH MECHANISMS; HIGH RESOLUTIONS; HRTEM IMAGES; MATERIAL CHARACTERISTICS; NANOWIRE LENGTHS; SILICON OXIDE NANOWIRES;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 57249108367     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-008-4806-6     Document Type: Article

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