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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 6, 2008, Pages 1831-1833

The transition mechanisms of a ten-period InAsGaAs quantum-dot infrared photodetector

(8) Tseng, Chi Che a Chou, Shu Ting b Lin, Shin Yen b,c Chen, Cheng Nan a Lin, Wei Hsun a Chen, Yi Hao a Chung, Tung Hsun a Wu, Meng Chyi a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b RESEARCH CENTER FOR APPLIED SCIENCES (Taiwan)

c NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITED STATES; INFRARED DETECTORS; LIGHT EMISSION; LUMINESCENCE; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTOLUMINESCENCE;

ASYMMETRIC RESPONSES; HIGH RESPONSIVITY; INFRARED PHOTO DETECTORS; PEAK DETECTION WAVELENGTHS; PEAK ENERGIES; PHOTOLUMINESCENCE EXCITATION SPECTRUMS; PHOTOLUMINESCENCE SPECTRUMS; QD DENSITIES; SPECTRAL BROADENING; SPECTRAL RESPONSES; TEMPERATURE DEPENDENCES; TRANSITION MECHANISMS; VOLTAGE POLARITIES; WETTING LAYER STATES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 57249108255 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.2990784 Document Type: Article

Times cited : (5)

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