Quantum-dot infrared photodetectors with p-type-doped GaAs barrier layers

IEEE Photonics Technology Letters

Volumn 17, Issue 11, 2005, Pages 2409-2411

  Chou, Shu Ting ^a   Tsai, Cheng Hsuan ^a   Wu, Meng Chyi ^a   Lin, Shih Yen ^b   Chi, Jim Yong ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Quantum dots (QDs); Quantum dot infrared photodetector (QDIP)

Indexed keywords

ELECTRIC POTENTIAL; FERMI LEVEL; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED DETECTORS; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS;

DARK CURRENT; QUANTUM DOT INFRARED PHOTODETECTOR (QDIP);

PHOTODETECTORS;

EID: 27744482006     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.858149     Document Type: Article

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