Influence of doping density on the normal incident absorption of quantum-dot infrared photodetectors

Applied Physics Letters

Volumn 88, Issue 17, 2006, Pages

  Chou, Shu Ting ^a   Wu, Meng Chyi ^a   Lin, Shih Yen ^b   Chi, Jim Yong ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRON EMISSION; INFRARED DETECTORS; LIGHT POLARIZATION; PHOTOCURRENTS; SCATTERING; VOLTAGE CONTROL;

DOPING DENSITY; INCIDENT ABSORPTION; QUANTUM-DOT INFRARED PHOTODETECTORS; QUANTUM-DOT REGION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33646389600     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2199589     Document Type: Article

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