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Volumn 301-302, Issue SPEC. ISS., 2007, Pages 817-820

Temperature-insensitive detectivity of 5-pair InAs/GaAs quantum-dot infrared photodetectors with asymmetric device structure

(5) Chou, Shu Ting a Chen, Shang Fu a Lin, Shih Yen b Wu, Meng Chyi a Wang, Jing Mei c

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b RESEARCH CENTER FOR APPLIED SCIENCES (Taiwan)

c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

Author keywords

A1. Infrared devices; A3. Thin film epitaxial growth; B3. Devices; B3. Quantum dots

Indexed keywords

ELECTRON TRANSITIONS; HIGH TEMPERATURE OPERATIONS; INFRARED DEVICES; PHOTOCURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

CURRENT BLOCKING BARRIERS; GAAS LAYERS; POSITIVE-TYPE DOPING DENSITY;

PHOTODETECTORS;

EID: 33947319135 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2006.11.128 Document Type: Article

Times cited : (6)

References (10)

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