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Applied Physics A: Materials Science and Processing

Volumn 94, Issue 2, 2009, Pages 399-403

Broad excitation of Er luminescence in Er-doped HfO2 films

(9) Wang, J Z a Shi, Z Q a Shi, Y a Pu, L a Pan, L J a Zhang, R a Zheng, Y D a Tao, Z S b Lu, F b

a NANJING UNIVERSITY (China)

b FUDAN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLYSIS; EMISSION SPECTROSCOPY; ENERGY TRANSFER; ERBIUM; HAFNIUM; HAFNIUM COMPOUNDS; ION BOMBARDMENT; ION IMPLANTATION; IONS; LASER EXCITATION; LIGHT SOURCES; LUMINESCENCE; OXYGEN; OXYGEN VACANCIES; PHOTOLUMINESCENCE; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION;

CL MEASUREMENTS; ER LUMINESCENCES; EXCITATION TRANSFERS; HOST MATRIXES; IMPLANTATION TECHNIQUES; MICROSTRUCTURE MEASUREMENTS; NONRESONANT EXCITATIONS; PHOTOLUMINESCENCE EXCITATIONS; PULSED LASERS; SENSITIZED LUMINESCENCES; SPECTRAL EMISSIONS; TRANSITION PROCESSES;

LIGHT EMISSION;

EID: 57249097038 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-008-4820-8 Document Type: Article

Times cited : (12)

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