Lattice site and photoluminescence of erbium implanted in α-Al2O3

Journal of Materials Research

Volumn 12, Issue 5, 1997, Pages 1401-1404

  Van Den Hoven, G N ^a   Polman, A ^a   Alves, E ^b   Da Silva, M F ^b   Melo, A A ^b   Soares, J C ^c  

^a FOM INSTITUTE AMOLF   (Netherlands)

^b INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^c CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ELECTRON TRANSITIONS; ERBIUM; ION IMPLANTATION; PHOTOLUMINESCENCE; SINGLE CRYSTALS;

ANGULAR SCANNING; ION CHANNELING; OPTICALLY ACTIVE SITE;

SAPPHIRE;

EID: 0031147160     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1997.0190     Document Type: Article

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