Photoluminescence band of Hf origin in hafnium-implanted silicon in the energy range 700 meV to 950 meV

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 19, 2005, Pages

  Sachdeva, R ^a   Istratov, A A ^a   Deenapanray, P N K ^b   Weber, E R ^a  

^a University of California Berkeley   (United States)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33344477790     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.195208     Document Type: Article

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