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Volumn 47, Issue 22, 2008, Pages 10325-10329

Physical and electrical properties of chemical vapor grown GaN nano/microstructures

Author keywords

[No Author keywords available]

Indexed keywords


EID: 57149120589     PISSN: 00201669     EISSN: None     Source Type: Journal    
DOI: 10.1021/ic702427u     Document Type: Article
Times cited : (19)

References (33)
  • 28
    • 0003847221 scopus 로고
    • Cardona, M, Guntherodt, G, Eds, Springer-Verlag: Berlin, Light Scattering in Solids II
    • Cardona, M. In Topics in Applied Physics; Cardona, M., Guntherodt, G., Eds.; Springer-Verlag: Berlin, 1982; Vol. 50; Light Scattering in Solids II.
    • (1982) Topics in Applied Physics , vol.50
    • Cardona, M.1
  • 33
    • 0003114331 scopus 로고    scopus 로고
    • Gallium Nitride (GaN) I
    • Willardson, R. K, Weber, E. R, Eds, Academic Press: San Diego, CA
    • Pankov, J. I.; Moustakas, T. D. Gallium Nitride (GaN) I. Semiconductors and Semimetals; Willardson, R. K., Weber, E. R., Eds.; Academic Press: San Diego, CA, 1998; Vol. 50, pp 259-265.
    • (1998) Semiconductors and Semimetals , vol.50 , pp. 259-265
    • Pankov, J.I.1    Moustakas, T.D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.