The metal-insulator transition in v O2 studied using terahertz apertureless near-field microscopy

Applied Physics Letters

Volumn 91, Issue 16, 2007, Pages

  Zhan, Hui ^a   Astley, Victoria ^a   Hvasta, Michael ^a   Deibel, Jason A ^a,c   Mittleman, Daniel M ^a   Lim, Yong Sik ^b  

^a Rice University   (United States)

^b Konkuk University   (South Korea)

^c WRIGHT STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGE; MICRON SCALE METALLIC DOMAINS; SUBWAVELENGTH SPATIAL RESOLUTIONS; TERAHERTZ AMPLITUDES; TERAHERTZ SIGNALS; VANADIUM DIOXIDES;

ELECTRIC CONDUCTIVITY; NEAR FIELD SCANNING OPTICAL MICROSCOPY; THIN FILMS; VANADIUM COMPOUNDS;

METAL INSULATOR TRANSITION;

EID: 35548936880     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2801359     Document Type: Article

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