Effective control of surface property on poly(silsesquioxane) films by chemical modification

Thin Solid Films

Volumn 517, Issue 4, 2008, Pages 1335-1339

  Hamada, Takashi ^a,b   Nagase, Takashi ^a,b   Kobayashi, Takashi ^a,b   Matsukawa, Kimihiro ^a,c   Naito, Hiroyoshi ^a,b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b Osaka Prefecture University   (Japan)

^c OSAKA MUNICIPAL TECHNICAL RESEARCH INSTITUTE   (Japan)

Author keywords

Chemical modification; Organic thin film transistor; Polysilsesquioxane; Surface property

Indexed keywords

CHEMICAL MODIFICATION; CHEMICAL PROPERTIES; CHEMICAL SENSORS; CONTACT ANGLE; COUPLING AGENTS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; SEMICONDUCTING ORGANIC COMPOUNDS; SILANES; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRACE ANALYSIS;

BEFORE AND AFTER; ELECTRICAL PERFORMANCES; FOURIER TRANSFORM INFRARED; FTIR SPECTRUMS; HIGH WATERS; OCTADECYLTRICHLOROSILANE; ORGANIC THIN-FILM TRANSISTOR; POLYSILSESQUIOXANE; SILANOL; SILSESQUIOXANE; SURFACE MODIFICATIONS; WATER CONTACT ANGLES;

SURFACE PROPERTIES;

EID: 57049097532     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.09.033     Document Type: Article

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