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Volumn 47, Issue 4 PART 2, 2008, Pages 3196-3199

Fabrication and characterization of poly(3-hexylthiophene)-based field-effect transistors with silsesquioxane gate insulators

(8) Tomatsu, Kenji a Hamada, Takashi a,c Nagase, Takashi a,c Yamazaki, Saori a,c Kobayashi, Takashi a,c Murakami, Shuichi b,c Matsukawa, Kimihiro b,c Naito, Hiroyoshi a,c

a Osaka Prefecture University (Japan)

b OSAKA MUNICIPAL TECHNICAL RESEARCH INSTITUTE (Japan)

c JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

Gate insulator; Organic field effect transistor; Organic inorganic hybrid dielectric; Poly(3 hexylthiophene); Poly(methyl silsesquioxane)

Indexed keywords

CARRIER MOBILITY; COLLOIDS; CONCENTRATION (PROCESS); DIELECTRIC MATERIALS; ELECTRIC RESISTANCE; FILM PREPARATION; GATE DIELECTRICS; GATES (TRANSISTOR); GELATION; HEAT TREATMENT; ORGANIC COMPOUNDS; ORGANIC SOLVENTS; SILICON COMPOUNDS; SOL-GEL PROCESS; TOLUENE; TRANSISTORS; WATER CONTENT;

GATE INSULATOR; ORGANIC FIELD-EFFECT TRANSISTOR; ORGANIC-INORGANIC HYBRID DIELECTRIC; POLY(3-HEXYLTHIOPHENE); POLY(METHYL SILSESQUIOXANE);

FIELD EFFECT TRANSISTORS;

EID: 54249136777 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.47.3196 Document Type: Article

Times cited : (22)

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