High-performance (AlxGa1-x)0.5 In0.5P-based flip-chip light-emitting diode with a geometric sapphire shaping structure

IEEE Photonics Technology Letters

Volumn 20, Issue 23, 2008, Pages 1950-1952

  Lee, Yea Chen ^a   Kuo, Hao Chung ^a   Lee, Chia En ^a   Lu, Tien Chang ^a   Wang, Shing Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

AlGaInP based light emitting diodes (LEDs); Geometric sapphire shaping flip chip light emitting diodes (GSSFC LEDs)

Indexed keywords

CORUNDUM; DIODES; FLIP CHIP DEVICES; GALLIUM; LIGHT EMISSION; LIGHT SOURCES; SAPPHIRE; SURFACE STRUCTURE;

ALGAINP; ALGAINP-BASED LIGHT-EMITTING DIODES (LEDS); CHEMICAL ETCHINGS; CURRENT INJECTIONS; EPIWAFER; GEOMETRIC SAPPHIRE SHAPING FLIP-CHIP LIGHT-EMITTING DIODES (GSSFC-LEDS); LIGHT EMITTING DIODE LEDS; LIGHT POWERS; NANOSCALE; NOVEL STRUCTURES; OUTPUT POWERS; PLUG EFFICIENCIES; ROUGH TEXTURES;

LIGHT EMITTING DIODES;

EID: 57049089931     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.2005507     Document Type: Article

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