Strained Gaxln1-xP/(AIGa)0.5In0.5P Heterostructures and Quantum-Well Laser Diodes

IEEE Journal of Quantum Electronics

Volumn 30, Issue 2, 1994, Pages 593-607

  Geels, R S ^b   Welch, D F ^b   Paoli, T L ^a   Ponce, F ^a   Thornton, R L ^a   Krusor, B S ^a   Bringans, R D ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

^b Spectra Diode Labs Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

SINGLE QUANTUM WELLS; STRAINED LAYERS;

SEMICONDUCTOR LASERS;

EID: 0028375598     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/3.283808     Document Type: Article

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