Strain-induced modifications of the band structure of In xGa 1- xP-In 0.5Al 0.5P multiple quantum wells

IEEE Journal of Quantum Electronics

Volumn 34, Issue 1, 1998, Pages 93-99

  Interholzinger, Kathryn ^b,c,f   Patel, Dinesh ^b,g   Menoni, Carmen S ^a,b,f,h   Thiagarajan, Prabhuran ^b,d   Robinson, Gary Y ^a,b   Fouquet, Julie E ^a,e  

^a IEEE

^b Engineering Research Center and Hydraulics Laboratory   (United States)

^c Advanced Energy   (United States)

^d AE Spectracom   (United States)

^e HEWLETT PACKARD LABORATORIES   (United States)

^f Department of Environmental and Radiological Health Sciences   (United States)

^g UNIVERSITY OF SURREY   (United Kingdom)

^h AMERICAN PHYSICAL SOCIETY   (United States)

Author keywords

Heterojunctions; Photoluminescent materials devices; Pressure measurements; Quantum wells; Semiconductor heterojunctions; Strain

Indexed keywords

BAND STRUCTURE; CALCULATIONS; HETEROJUNCTIONS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; PRESSURE MEASUREMENT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN;

GAS SOURCE MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE EXCITATION MEASUREMENTS; PHOTOLUMINESCENT DEVICES; PHOTOLUMINESCENT MATERIALS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031647677     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.655012     Document Type: Article

References (30)

1. 0.5P hetererostructure and quantum-well laser diodes," IEEE J. Quantum Electron., vol. 30, pp. 593-607, 1994.
2. D. P. Bour, D. W. Treat, K. J. Beernink, B. S. Krusor, R. S. Geels, and D. F. Welch, "610-nm band AlGaInP single quantum well laser diode," IEEE Photon. Technol. Lett., vol. 6, pp. 128-131, 1994.
3. 0.5P laser," Appl. Phys. Lett., vol. 60, pp. 1927-1929, 1992.
4. J. Hashimoto, T. Katsuyama, J. Shinkai, I. Yoshida, and H. Hayasi, "Effects of strained-layer structures on the threshold current density of AlGaInP/GaInP visible lasers," Appl. Phys. Lett., vol. 58, pp. 879-880, 1991.
5. F. H. Pollak, Semiconductors and Semimetals, T. P. Pearsall, Ed. New York: Academic, 1990, vol. 32.
6. C. G. Van de Walle, "Band lineups and deformation potentials in the model-solid theory," Phys. Rev. B, vol. 39, pp. 1871-1882, 1989.
7. 1-xAs quantum-well bound states: The determination of valence band offsets," J. Vac. Sci. Technol. B, vol. 4, pp. 1043-1050, 1986.
8. C. Cohen-Tannaoudji, B. Diu, and F. Laloë, Quantum Mechanics. New York: Wiley Interscience, 1977.
9. P. Merle, D. Auvergne, H. Mathieu, and J. Chevallier, "Conduction band structure of GaInP," Phys. Rev. B, vol. 15, pp. 2032-2047, 1976.
10. 1-xP," J. Appl. Phys., vol. 43, pp. 3455-3460, 1972.
11. M. Bugaski, A. M. Kontkiewicz, and H. Mariette, "Energy bands of ternary alloy semiconductors: coherent-potential-approximation calculations," Phys. Rev. B, vol. 28, pp. 7105-7114, 1983.
12. 0.5P multiple quantum wells," Phys. Rev. B, vol. 53, pp. 12633-12636, 1996.
13. W. Paul and D. M. Warschauer, in Solids Under Pressure, New York: McGraw-Hill, 1963, p. 226.
14. K. Mahalingam, N. Otsuka, M. J. Hafich, and G. Y. Robinson, "Correlation of spontaneous ordering in InGaP alloys with surface reconstruction," Bull. Amer. Phys. Soc., vol. 38, p. 737, 1993.
15. M. J. Hafich, H. Y. Lee, G. Robinson, D. Li, and N. Otsuka, "Quantum-well structures of InAlP/InGaP grown by gas-source molecular-beam epitaxy," J. Appl. Phys., vol. 69, pp. 752-736, 1991.
16. 1-yP multiple quantum wells," Phys. Rev. B, vol. 48, pp. 18031-18036, 1993.
17. 1-xAs," Phys. Rev. B, vol. 40, pp. 11619-11633, 1989.
18. M. Watanabe, H. Matsura, and N. Shimada, "Investigation of tensilestrained InGaAlP multiple quantum well active regions by photoluminescence measurements," J. Appl. Phys., vol. 76, pp. 7942-7946, 1994.
19. R. People and S. K. Sputz, "Band nonparabolicities in lattice-mismatchstrained bulk semiconductor layers," Phys. Rev. B, vol. 41, pp. 8431-8439, 1990.
20. T. Hayakawa, K. Takahashi, M. Hosada, S. Yamamoto, and T. Hijikata, "GaInP/AlInP quantum well structures and double heterojunction lasers grown by molecular beam epitaxy," Jap. J. Appl. Phys., vol. 27, pp. L1553-L1555, 1988.
21. O. P. Kowalski, J. W. Cockburn, D. J. Mowbray, M. S. Skolnick, R. Teissier, and M. Hopkinson, "GaInP-AlGaInP band offsets determined from hydrostatic pressure measurements," Appl. Phys. Lett., vol. 66, pp. 619-621, 1995.
22. A. D. Prins, J. L. Sly, A. T. Meney, D. J. Dunstan, E. P. O'Reilly, A. R. Adams, and A. Valster, "High pressure determination of AlGaInP band structure," J. Phys. Chem. Solids, vol. 56, pp. 349-357, 1995.
23. D. J. Mowbray, O. P. Kowalski, M. Hopkinson, M. S. Skolnick, and J. P. R. David, "Electronic band structure of AlGaInP grown by solid-source molecular-beam epitaxy," Appl. Phys. Lett., vol. 65, pp. 213-215, 1994.
24. C. S. Menoni, O. Buccafusca, M. C. Marconi, D. Patel, J. J. Rocca, G. Y. Robinson, and S. Goodnick, "Effect of indirect Γ-L and Γ-Χ transfer on the carrier dynamics of InGaP/InAlP multiple quantum wells," Appl. Phys. Lett., vol. 70, pp. 102-104, 1997.
25. M. D. Dawson, G. Duggan, and D. J. Arent, "Optical measurements of electronic bandstructure in tensile strain GaInP-AlGaInP quantum wells," Phys. Rev. B, vol. 51, pp. 17660-17666, 1995.
26. M. D. Dawson and G. Duggan, "Band-offset determination for GaInP-AlGaInP structures with compressively strained quantum well active layers," Appl. Phys. Lett., vol. 64, pp. 892-895, 1994.
27. A. T. Meney, A. D. Prins, A. F. Phillips, J. L. Sly, E. P. O'Reilly, D. J. Dunstan, A. R. Adams, and A. Valster, "Determination of the band structure of disordered AlGaInP and its influence on visible-laser characteristics," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 697-706, 1995.
28. xP alloy system," Solid State Commun., vol. 14, pp. 621-624, 1974.
29. 0.52P measured under hydrostatic pressure," Appl. Phys. Lett., vol. 58, pp. 744-746, 1991.
30. S. L. Chuang, Physics of Optoelectronic Devices. New York: Wiley, 1995.