Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency

Materials Science and Engineering: B

Volumn 138, Issue 2, 2007, Pages 157-160

  Lee, Y J ^a,b   Lu, T C ^a   Kuo, H C ^a   Wang, S C ^a   Hsu, T C ^b   Hsieh, M H ^b   Jou, M J ^b   Lee, B J ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b EPISTAR CORPORATION   (Taiwan)

Author keywords

AlGaInP based LEDs; Chemical wet etching; Nano roughening

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; EXTRACTION; MORPHOLOGY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING ALUMINUM COMPOUNDS;

ADHESIVE LAYER BONDING; CHEMICAL WET ETCHING; NANO-ROUGHENED MORPHOLOGY;

LIGHT EMITTING DIODES;

EID: 33847254429     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.11.015     Document Type: Article

References (11)

1. Sugawara H., Ishikawa M., and Hatakoshi G. Appl. Phys. Lett. 58 (1991) 1010
2. Kuo C.P., Fletcher R., Osentowski T., Lardizabal M., Craford M., and Robbins V. Appl. Phys. Lett. 57 (1990) 2937
3. Stringfellow G.B., and Craford M.G. High Brightness Light Emitting Diodes (1997), Academic Press, Boston
4. Krames M.R., Ochiai-Holcomb M., Höfler G.E., Carter-Coman C., Chen E.I., Tan I.-H., Grillot P., Gardner N.F., Gardner H.F., Chui H.C., Huang J.-W., Stockman S.A., Kish F.A., and Craford M.G. Appl. Phys. Lett. 75 (1999) 2365
5. Schmid W., Scherer M., Jager R., Stauss P., Streubel K., and Ebeling K.J. Proc. SPIE 4278 (2001) 106
6. Under N., Kugler S., Stauss P., Streubel K.P., Wirth R., and Zull H. Proc. SPIE 4278 (2001) 19
7. Schnitzer I., Yablonovitch E., Caneau C., Gmitter T.J., and Scherer A. Appl. Phys. Lett. 63 (1993) 2174
8. Windisch R., Dutta B., Kuijk M., Knobloch A., Meinlschmidt S., Schoberth S., Kiesel P., Borghs G., Döhler G.H., and Heremans P. IEEE Trans. Electron Dev. 47 (2000) 1492
9. Huh C., Lee K.S., Kang E.J., and Park S.J. J. Appl. Phys. 93 (2003) 9383
10. Lee Y.J., Kuo H.C., Wang S.C., Hsu T.C., Hsieh M.H., Jou M.J., and Lee B.J. IEEE Photonic Technol. Lett. 17 11 (2005) 2289-2291
11. Gao Y., Fujii T., Sharma R., Fujito K., DenBaars S.P., Nakamura S., and Hu E.L. Jpn. J. Appl. Phys. 43 (2004) 637