Orientation dependence of electrical properties for Bi 4-x Nd x Ti 3 O 12 (x = 0.85) thin film deposited on p-type Si(1 0 0) substrate

Applied Surface Science

Volumn 255, Issue 5 PART 2, 2008, Pages 2710-2714

  Yi, Seung Woo ^a   Kim, Sang Su ^a   Kim, Won Jeong ^a   Do, Dalhyun ^a  

^a Changwon National University   (South Korea)

Author keywords

Bi 3.15 Nd 0.85 Ti 3 O 12 thin film; C V characteristics; Chemical solution deposition; I V behavior

Indexed keywords

BISMUTH COMPOUNDS; CHEMICALS; DEPOSITION; NEODYMIUM COMPOUNDS; SUBSTRATES; THIN FILMS; TITANIUM COMPOUNDS;

C-V CHARACTERISTIC; CHEMICAL SOLUTION DEPOSITION; CHEMICAL SOLUTION DEPOSITION METHOD; CURRENT CONDUCTION MECHANISMS; HIGH-FREQUENCY STABILITY; I-V BEHAVIOR; LEAKAGE CURRENT ANALYSIS; PREFERRED ORIENTATIONS;

FILM PREPARATION;

EID: 56949101784     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.07.182     Document Type: Article

References (20)

1. Scott J.F. Ferroelectric Memories (2000), Springer, Berlin
2. Park B.H., Kang B.S., Bu S.D., Noh T.W., Lee J., and Jo W. Nature (London) 401 (1999) 682
3. Maiwa H., Iizawa N., Togawa D., Hayashi T., Sakamoto W., Yamada M., and Hirano S. Appl. Phys. Lett. 82 (2003) 1760
4. Chon U., Kim K.B., Jang H.M., and Yi G.C. Appl. Phys. Lett. 79 (2001) 3137
5. Gao X.S., Xue J.M., and Wang J. J. Appl. Phys. 97 (2005) 034101
6. Wu D., Li A., Zhu T., Liu J., and Ming N. J. Appl. Phys. 88 (2000) 5941
7. Garg A., Barber Z.H., Dawber M., Scott J.F., Snedden A., and Lightfoot P. Appl. Phys. Lett. 83 (2003) 2414
8. Watanabe T., Funakubo H., Osada M., Noguchi Y., and Miyayama M. Appl. Phys. Lett. 80 (2002) 100
9. Hu G.D. J. Appl. Phys. 100 (2005) 096109
10. Lu C.J., Liu X.L., Chen X.Q., Nie C.J., Rhun G.L., Senz S., and Hesse D. Appl. Phys. Lett. 89 (2006) 062905
11. Lu C.J., Qiao Y., Qi Y.J., Chen X.Q., and Zhu J.S. Appl. Phys. Lett. 87 (2005) 222901
12. Maffei N., and Krupanidhi S.B. J. Appl. Phys. 72 (1992) 3617
13. Yoshimura T., Fujimura N., Ito D., and Ito T. J. Appl. Phys. 87 (2000) 3444
14. Yang X.N., Huang B.B., Wang H.B., Shang S.X., Yao W.F., and Wei J.Y. J. Cryst. Growth 270 (2004) 98
15. Zhang S.T., Zhang X.J., Cheng H.W., Chen Y.F., Liu Z.G., Ming N.B., Hu X.B., and Wang J.Y. Appl. Phys. Lett. 83 (2003) 4378
16. Joshi P.C., and Desu S.B. J. Appl. Phys. 80 (1996) 2349
17. Chen S.Y., Sun C.L., Chen S.B., and Chin A. Appl. Phys. Lett. 80 (2002) 3168
18. Hou Y., Xu X.H., Wang H., Wang M., and Shang S.X. Appl. Phys. Lett. 78 (2001) 1733
19. Bae J.C., Kim S.S., Choi E.K., Park M.H., Kim H.J., Kim W.J., and Song T.K. Ferroelectrics 328 (2005) 133
20. Watanabe K., Hartmann A.J., Lamb R.N., and Scott J.F. J. Appl. Phys. 84 (1998) 2170