Accurate and efficient TCAD model for the formation and dissolution of small interstitial clusters and {3 1 1} defects in silicon

Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 401-403

  Zechner, Christoph ^a   Zographos, Nikolas ^a   Matveev, Dmitri ^a   Erlebach, Axel ^a  

^a SYNOPSYS SWITZERLAND LLC   (Switzerland)

Author keywords

Interstitial clusters; Process simulation; 3 1 1 Defects

Indexed keywords

ANNEALING; COMPUTER SIMULATION; DEFECTS; DISSOLUTION; ION IMPLANTATION; MATHEMATICAL MODELS;

INTERSTITIAL CLUSTERS; PREDICTIVE PROCESS; PROCESS SIMULATION; {3 1 1} DEFECTS;

SILICON;

EID: 27844512332     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.08.010     Document Type: Conference Paper

References (15)

1. A. Claverie, F. Christiano, B. Colombeau, E. Scheid, B. De Mauduit, Proceedings of the 14th International Conference on Ion Implantation Technology (IIT 2002) Taos, USA, p. 538.
2. A.H. Gencer, and S.T. Dunham J. Appl. Phys. 78 1997 5313
3. N.E.B. Cowern, G. Mannino, P.A. Stolk, F. Roozeboom, H.G.A. Huizing, and J.G.M. can Berkum Phys. Rev. Lett. 82 1999 4460
4. M.E. Law, K.S.Jones, Proceedings of the IEDM 2000, 2000 p. 21.4.1.
5. C. Ortiz, P. Pichler, F. Christiano, B. Colombeau, N.E.B. Cowern, and A. Claverie J. Appl. Phys. 96 2004 4866
6. D. Stiebel, P. Pichler, and N.E.B. Cowern Appl. Phys. Lett. 79 2001 2654
7. FLOOPS-ISE, ISE TCAD Release 10.0, User's Manual, Synopsys Inc., Zurich, October 2004.
8. H. Saleh, M.E. Law, S. Bharatan, K.S. Jones, V. Krishnamoorty, and T. Buyuklimanli Appl. Phys. Lett. 77 2000 112
9. P.A. Stolk, H.-J. Gossmann, D.J. Eaglesham, D.C. Jacobson, C.S. Rafferty, G.H. Gilmer, M. Jaraiz, J.M. Poate, H.S. Luftman, and T.E. Haynes J. Appl. Phys 81 1997 6031
10. A. Agarwal, T.E. Haynes, D.J. Eaglesham, H.-J. Gossmann, D.C. Jacobson, J.M. Poate, and Y.E. Erokin Appl. Phys. Lett. 70 1997 3332
11. N. Cherkashin, P. Calvo, F. Christiano, B. de Mauduit, and A. Claverie Mat. Res. Soc. Symp. Proc. 810 2004 C3.7.1.
12. F. Cristiano, N. Cherkashin, X. Hebras, P. Calvo, Y. Lamrani, E. Scheid, B. de Mauduit, C. Colombeau, W. Lerch, S. Paul, and A. Claverie Nucl. Inst. Meth. Phys. Res. B 216 2004 46
13. J. Kim, J.W. Wilkins, F.S. Khan, and A. Canning Phys. Rev. B 40 1989 10351
14. Peter Pichler Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon 2004 Springer
15. TSUPREM4 Reference Manual, Synopsys Inc., Mountain View, CA, 2004.