In(Al)GaAs-AlGaAs wafer fused VCSELs emitting at 2-μm wavelength

IEEE Photonics Technology Letters

Volumn 20, Issue 1, 2008, Pages 24-26

  Mereuta, Alexandru ^a   Iakovlev, Vladimir ^b   Caliman, Andrei ^a   Syrbu, Alexei ^a   Royo, Paul ^a   Rudra, Alok ^b   Kapon, Eli ^a  

^a EPFL   (Switzerland)

^b BeamExpress SA   (Switzerland)

Author keywords

Gas sensing; Vertical surface emitting laser; Wafer bonding

Indexed keywords

GAAS; GAAS-ALGAAS; GAS SENSING; INP; LONG WAVELENGTH; MODE-HOPPING; OPTICAL SPECTROSCOPY; ROOM TEMPERATURE; SIDE MODE SUPPRESSION RATIOS; SINGLE MODE; THRESHOLD CURRENTS; TUNING RATES; VERTICAL SURFACE EMITTING LASER; VERTICAL-CAVITY SURFACE EMITTING LASER;

CHEMICAL DETECTION; GALLIUM ALLOYS; GALLIUM ARSENIDE; GAS DETECTORS; LASERS; MIXED CONVECTION; SEMICONDUCTING GALLIUM; SURFACE EMITTING LASERS;

WAFER BONDING;

EID: 56749185824     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2007.910757     Document Type: Article

References (10)

1. P. Werle, "A review of recent advances in semiconductor laser based gas monitors," Spectrochimica Acta Part Molecular Biomolecular Spectrosc, vol. 54, no. 2, pp. 197-236, Feb. 1998.
2. M. Mitsuhara, M. Ogasawara, M. Oishi, H. Sugiura, and K. Kasaya, "2.05 μm wavelength InGaAs-InGaAsP distributed-feedback multiquantum-well lasers with 1.0 mW output power," IEEE Photon. Technol. Lett, vol. 11, no. 1, pp. 33-35, Jan. 1999.
3. S. Forouhar, A. Skendzov, A. Larsson, and H. Temkin, "In-GaAs/ InGaAsPInP strained-layer quantum well lasers at 2 μm," Electron Lett., vol. 28, pp. 1431-1432, 1992.
4. T. Bleuel, M. Müller, and A. Forchel, "2-μm GaInSb-AlGaAsSb distributed-feedback lasers," IEEE Photon. Technol. Lett, vol. 13, no. 6, pp. 553-555, Jun. 2001.
5. 2) strained single-quantum-well GalnAsSb/AlGaAsSb lasers emitting at 2.05 μim," Appl. Phys. Lett., vol. 72, no. 8, pp. 876-878, Feb. 23, 1998.
6. M. Amann and M. Ortsiefer, "Long-wavelength (1 ≥ 13 μm) InGaAlAs-InP vertical-cavity surface-emitting lasers," Phys. Stat. Sol. (a), vol. 203, no. 14, pp. 3538-3544, 2006.
7. A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and. E. Kapon, "Cavity mode-gain peak tradeoff for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70°C," IEEE Photon. Technol. Lett., vol. 19, no. 2, pp. 121-123, Jan. 1, 2007.
8. A. Mereuta, A. Sirbu, V. Iakovlev, A. Rudra, A. Caliman, G. Suruceanu, C.-A. Berseth, E. Deichsel, and E. Kapon, "1.5 μm VCSEL structure optimization for high-power and high-temperature operation," J. Cryst. Growth, vol. 27, pp. 520-525, 2004.
9. A. Mereuta, V. Iakovlev, A. Caliman, P. Royo, A. Mircea, A. Rudra, G. Suruceanu, A. Syrbu, and E. Kapon, "High single mode power wafer fused InAlGaAs/InP-AlGaAs/GaAs VCSELs emitting in the 1.3-1.6 μm wavelength range," in Proc. 19th Indium Phosphide Related Mater. Conf, Matsue, Japan, May 14-18, 2007, Paper WeB3-3.
10. P. Rees, P. Blood, M. J. H. Vanhommerig, G. J. Davies, and P. J. Skevington, "The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs-InP lasers," J. Appl. Phys., vol. 78, no. 3, pp. 1804-1807, Aug. 1, 1995.