2-μm GaInSb-AlGaAsSb distributed-feedback lasers

IEEE Photonics Technology Letters

Volumn 13, Issue 6, 2001, Pages 553-555

  Bleuel, T ^b   Muller M ^b   Forchel, A ^a,b  

^a IEEE

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

CO2; Distributed feedback (DFB) lasers; Gas sensing; InGaSb; Semiconductor lasers

Indexed keywords

CARBON DIOXIDE; CHEMICAL SENSORS; CONTINUOUS WAVE LASERS; DIFFRACTION GRATINGS; ELECTRIC CURRENTS; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

ALUMINUM GALLIUM ARSENIDE ANTIMONIDE; BRAGG GRATINGS; GALLIUM INDIUM ANTIMONIDE; LASER STRUCTURE; ROOM TEMPERATURE CONTINUOUS WAVE OPERATION; SIDEMODE SUPPRESSION RATIOS; SINGLE MODE EMISSION; THRESHOLD CURRENTS;

DISTRIBUTED FEEDBACK LASERS;

EID: 0035362755     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.924017     Document Type: Article

References (8)

1. A review of recent advances in semiconductor laser based gas monitors
2. Hydrogen chloride gas monitoring at 1.74 μm with InGaAs/InGaAsP strained quantum well laser
3. 2.0 μm single-mode operation of InGaAs-InGaAsP distributed-feedback buried-heterostructure quantum well lasers
4. 2.05 μm wavelength InGaAs-InGaAsP distributed-feedback multi-quantum-well lasers with 10 mW output power
5. High power multiple-quantum-well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current density
6. 2) strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05 μm
7. InGaAsSb-AlGaAsSb distributed-feedback lasers emitting at 1.72 μm
8. Low threshold high-quantum-efficiency laterally gain coupled InGaAs/AlGaAs distributed feedback lasers