Silvaco modeling of a 10KV SIC P-I-N diode

Conference Record of the International Power Modulator Symposium and High Voltage Workshop

Volumn , Issue , 2004, Pages 567-570

  Thomas, R L ^a   Morgenstern, M ^a   Bayne, S B ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COMPUTER SOFTWARE; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRONIC EQUIPMENT; ENERGY GAP; NETWORKS (CIRCUITS); SILICON CARBIDE;

HIGH POWER SWITCHING; P-I-N DIODES; POWER ELECTRONIC DEVICES; SILVACO MODELING;

SEMICONDUCTOR DIODES;

EID: 22244473018     PISSN: 10768467     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. J.B. Casady, in Processing of Wide Bandgap Semiconductors, ed. S.J.Pearton (William Andrews Publishing, Norwich, NY, 2000).
2. W.J. Schaffer, G.H. Negley, K. G. Irvine, and J.W. Palmour, "Conductivity anisotropy in epitaxial 6H and 4H SiC," in Diamond, SiC and Nitride Wide-Bandgap Semiconductors, Materials Research Society Proceedings, Vol.339, pp. 595-600, 1994.
3. V. A. K. Temple and W. Tantraporn, "Junction Termination Extensions for Near-Ideal Breakdown Voltage in p-n Junctions", IEEE Transactions on Electron Devices, vol., 33, p. 1601, 2002.
4. P.A. Ivanov, M.E. Levisnhtein, S.L. Rumyantsev, S. Ryu, A. K. Agarwal and J.W. Palmour, Solid-State Electronics 46, 567(2002).