Low-frequency noise of strained-Si nMOSFETs fabricated on a chemical-mechanical-polished SiGe virtual substrate

Semiconductor Science and Technology

Volumn 23, Issue 10, 2008, Pages

  Lin, H Y ^c   Wu, S L ^b   Chang, S J ^c   Wang, Y P ^a   Kuo, C W ^c  

^a VANUNG UNIVERSITY   (Taiwan)

^b CHENG SHIU UNIVERSITY   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MECHANICAL POLISHING; ELECTRIC BREAKDOWN; FIELD EFFECT TRANSISTORS; NANOTECHNOLOGY; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; SILICON ALLOYS; THERMAL NOISE;

1/F NOISES; CARRIER NUMBER FLUCTUATIONS; CMP PROCESSES; LOW-FREQUENCY NOISES; NMOSFETS; SI DEVICES; SMOOTHER SURFACES; UNIFIED MODELS; VIRTUAL SUBSTRATES;

CHEMICAL POLISHING;

EID: 56349159639     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/10/105022     Document Type: Article

References (10)

1. Wu S L, Wang Y P and Chang S J 2006 Controlled misfit dislocation technology in strained silicon MOSFETs Semicond. Sci. Technol. 21 44-7
2. Fiorenza J G et al 2004 Film thickness constraints for manufacturable strained silicon Semicond. Sci. Technol. 19 L4-8
3. Hoyt J L, Nayfeh H M, Eguchi S, Aberg I, Xia G, Drake T, Fitzgerald E A and Antoniadis D A 2002 Strained silicon MOSFET technology IEDM Tech. Dig. 23-6
4. x buffer layer on mobility enhancement in a strained-Si n-channel metal-oxide-semiconductor field-effect transistor Appl. Phys. Lett. 75 2848-950
5. Sugii N, Hisamoto D, Washio K, Yokoyama N and Kimura S 2002 Performance enhancement of strained-Si MOSFETs fabricated on a chemical-mechanical-polished SiGe substrate IEEE Trans. Electron Devices 49 2237-43
6. Hua W-C, Lee M H, Chen P S, Maikap S and Liu C W 2004 Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs IEEE Electron Device Lett. 25 693-5
7. Simoen E, Eneman G, Verheyen P, Delhougne R, Loo R, Meyer K D and Claeys C 2005 On the beneficial impact of tensile-strained silicon substrates on the low-frequency noise of n-channel metal-oxide-semiconductor transistors Appl. Phys. Lett. 86 223509
8. Wang Y P, Wu S L and Chang S J 2007 Low-frequency noise characteristics in strained-Si nMOSFETs IEEE Electron Device Lett. 28 36-8
9. Allogo Y A, Marin M, Murcia M D, Llinares P and Cottin D 2002 1/f noise in 0.18 μm technology n-MOSFETs from subthreshold to saturation Solid-State Electron. 46 977-83
10. Ghibaudo G and Boutchacha T 2002 Electrical noise and RTS fluctuations in advanced CMOS devices Microelectron. Reliab. 42 573-82