A unified charge-based model for symmetric DG MOSFETs valid for both heavily doped body and undoped channel

Proceedings of The 15th International Conference Mixed Design of Integrated Circuits and Systems, MIXDES 2008

Volumn , Issue , 2008, Pages 367-372

  Zhang, L ^a   He, J ^a   Liu, F ^a   Zhang, J ^a   Song, Y ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Charge based model; Compact model; Current model; Double gate MOSFET

Indexed keywords

DRAIN CURRENT; GALERKIN METHODS; INTEGRATED CIRCUITS; MATHEMATICAL MODELS;

CHARGE BASED MODEL; COMPACT MODEL; CURRENT MODEL; DG MOSFETS; DOUBLE-GATE MOSFET; DRAIN CURRENT MODELS; INVERSION CHARGE DENSITIES; INVERSION CHARGES; INVERSION REGIONS; MODERATE INVERSIONS; NUMERICAL SIMULATIONS; UNDOPED CHANNELS; WEAK INVERSIONS;

MOSFET DEVICES;

EID: 56349092450     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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