Realization of high-power highly efficient GaInP/AlGaInP ridge laser diodes for recordable/rewritable digital versatile discs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 2 A, 2006, Pages 774-777

  Ma, Byungjin ^a   Cho, Soohaeng ^b   Lee, Changyun ^a   Lee, Sangbum ^a   Kang, Joonseok ^a   Kim, Bumjoon ^a   Kang, Donghoon ^a   Shin, Youngchul ^a   Kim, Youngmin ^a   Kim, Taegeun ^c   Park, Yongjo ^b  

^a Samsung Electro Mechanics   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Korea University   (South Korea)

Author keywords

660 nm; AlGaInP; Aspect ratio; Beam divergence angle; DVD R RW; High power; LD

Indexed keywords

ASPECT RATIO; ETCHING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE;

BEAM DIVERGENCE ANGLE; HIGH POWER; LD;

LASERS;

EID: 32244433898     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.45.774     Document Type: Article

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