670 nm tapered lasers and amplifiers with output powers P ≥ 1 W and nearly diffraction limited beam quality

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6485, Issue , 2007, Pages

  Sumpf, B ^a   Erbert, G ^a   Fricke, J ^a   Froese, P ^a   Haring R ^b   Kaenders, W G ^b   Klehr, A ^a   Lison, F ^b   Ressel, P ^a   Wenzel, H ^a   Weyers, M ^a   Zorn, M ^a   Trankle G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b TOPTICA PHOTONICS AG   (Germany)

Author keywords

Diffraction limited; High power diode lasers; MOPA; Red lasers; Tapered amplifiers; Tapered lasers

Indexed keywords

DIFFRACTION LIMITED BEAM QUALITY; HIGH POWER DIODE LASERS; MASTER OSCILLATOR POWER AMPLIFIERS (MOPA); RED LASERS; TAPERED AMPLIFIERS; TAPERED LASERS;

BEAM QUALITY; DIFFRACTION; LIGHT EMISSION; POWER AMPLIFIERS; THERMAL EFFECTS; WAVEGUIDES;

HIGH POWER LASERS;

EID: 34248635145     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.697935     Document Type: Conference Paper

References (13)

1. T. Onishi, K. Inoue, K. Onozawa, T. Takayama, M. Yuri, "High-power and High-Temperature Operation of Mg-Doped AlGaInP-Based Red Laser Diodes", IEEE Journal of Quantum Electronics, 40, 1634-1638 (2004)
2. I. Charamisinau, G. S. Happawana, G. A. Evans, J. B. Kirk, D. P. Bour, A. Rosen, R. A. His, "High-power Semiconductor Red Laser Array for Use in Photodynamic Therapy", IEEE Journal of Selected Topics in Quantum Electronics, 111, 881-890 (2005)
3. S. Orsila, M. Toivonen, P. Savolainen, V. Vilokkinen, P. Melanen, M. Pessa, M. Saarinen, P. Uusimaa, P. Corvini, F. Fang, M. Jansen, R. Nabiev, "High power 600 nm range lasers grown by solid source molecular beam epitaxy", In-Plane Semiconductor Lasers III, Proceedings of SPIE Vol. 3628, 203-208 (1999)
4. B. Sumpf, M. Zorn, R. Staske, J. Fricke, P. Ressel, A. Ginolas, K. Paschke, G. Erbert, M. Weyers, G. Tränkle "3 W - broad area lasers and 12 W - bars with conversion efficiencies up to 40% at 650 nm" Conference Digest 2006 IEEE 20th International Semiconductor Laser Conference, pp. 37-38; IEEE Catalog Number: 06CH37738C; ISBN Number: 0-7803-9560-3; Library of Congress: 2005934158
5. B. Pezeshki, M. Hagberg, B. Lu, M. Zeleinski, S. Zou, E. Kolev "High Power and Diffraction-Limited Red Lasers" In-Plane Semiconductor Lasers IV, Editors: L. J. Mawst, R. U. Martinelli; Proceedings of SPIE Vol. 3947; 80-90 (2000)
6. G. D. Severn, D. A. Edrich, R. McWilliams "Argon ion laser-induced fluorescence with diode lasers" Rev. Sci. Instruments 69, 10-15 (1998)
7. 147,149Sm Measured Using Saturated Absorption Spectroscopy in Combination with Resonacnce-Ionization Mass Spectroscopy" Journal of the Korean Physical Society, 43, 336-341 (2003)
8. M. Praeger, V. Vuletic, T. Fischer, T. W. Hänsch, C. Zimmermann "A broad emitter diode laser system for lithium Spectroscopy" Appl. Phys. B, 67, 163-166 (1998)
9. N. Linder, R. Butendeich, W. Schmid, S. Tautz, K. Streubel, C. Karnutsch, S. Rurländer, H. Schweizer, F. Scholz, "900 mW continuous wave operation of AlInGaP tapered lasers and superluminescent diodes at 640 nm"; Conference on Lasers and Electro-Optics, 2004; CMJ1
10. M. Zorn, H. Wenzel, U. Zeimer, B. Sumpf, G. Erbert, M. Weyers, "High-power red laser diodes grown by MOVPE", J. Cryst. Growth (2006) doi: 10.1016/j.jcrysgro.2006.10.109 in print
11. P. Ressel, G. Erbert, U. Zeimer, K. Häusler, G. Beister, B. Sumpf, A. Klehr, G. Tränkle, "Novel Passivation Process for the Mirror Facets of High-Power Semiconductor Diode Lasers", IEEE Photonics Technology Letters 17, 962-964 (2005)
12. W. Pittroff, G. Erbert, G. Beister, F. Bugge, A. Klein, A. Knauer, J. Maege, P. Ressel, J. Sebastian, R. Staske, G. Tränkle, "Mounting of high power laser diodes on Boron Nitride heat sinks using an optimized Au/Sn metallurgy", IEEE Transactions on Advanced Packaging, 24, 434-441 (2001)
13. R. Häring, B. Sumpf, G. Erbert, G. Tränkle, F. Lison, W. G. Kaenders "670 nm semiconductor lasers for Lithium Spectroscopy with 1 W Proceedings of SPIE, Photonics West 2007