Optimisation of high power AlGaInP laser diodes for optical storage applications

IEE Proceedings: Optoelectronics

Volumn 153, Issue 6, 2006, Pages 321-325

  Elliott, S N ^a   Smowton, P M ^a   Berry, G ^b  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b IQE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; OPTICAL DATA STORAGE; OPTICAL DESIGN; SEMICONDUCTING ALUMINUM COMPOUNDS; VIDEODISKS;

MODE STRUCTURE; OPTICAL STORAGE; THRESHOLD CURRENTS; VERTICAL FARFIELD DIVERGENCE;

SEMICONDUCTOR LASERS;

EID: 33751337305     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20060050     Document Type: Conference Paper

References (12)

1. Charamisinau, I., Happawana, G., Evans, G.A., Kirk, J.B., Bour, D.P., Rosen, A., and Hsi, R.A.: ' High-power semiconductor red laser arrays for use in photodynamic therapy ', IEEE J. Sel. Top. Quantum Electron., 2005, 11, (4), p. 881-891 10.1109/JSTQE.2005.857717 1077-260X
2. Ma, B., Cho, S., Lee, C., Lee, S., Kang, J., Kim, B., Kang, D., Shin, Y., Kim, Y., Kim, T., and Park, Y.: ' Realization of high-power highly efficient GaInP/AlGaInP ridge laser diodes for recordable/rewritable digital versatile discs ', Jpn J. Appl. Phys., 2006, 45, (2A), p. 774-777 0021-4922
3. Huang, M-F., Tsai, M-L., and Kuo, Y-K.: ' Improvement of characteristic temperature for AlGaInP laser diodes ', Proc. SPIE, 2005, 5628, p. 127-134
4. Bland, S.: ' IQE ', Private communication
5. Coldren, L.A., and Corzine, S.W.: ' Diode lasers and photonic integrated circuits ', (John Wiley and Sons, New York, NY, 1995)
6. Maximov, M.V., Shernyakov, Y.M., Novikov, I.I., Kuznetsov, S.M., Karachinsky, L.Y., Gordeev, H.Y., Kalosha, V.P., Shchukin, V.A., and Ledentsov, N.N.: ' High performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence ', IEEE J. Quantum Electron., 2006, 41, (11), p. 1341-1348 10.1109/JQE.2005.857066 0018-9197
7. Smowton, P.M., Lewis, G.M., Yin, M., Summers, H.D., Berry, G., and Button, C.C.: ' 650-nm lasers with narrow far-field divergence with integrated optical mode expansion layers ', IEEE J. Sel. Top. Quantum Electron., 1999, 5, (3), p. 735-739 10.1109/2944.788444 1077-260X
8. Isshiki, K., Kamizato, T., Takami, A., Shima, A., Karakida, S., Matsubara, H., and Susaki, W.: ' High-power 780nm window diffusion stripe laser diodes fabricated by an open-tube two-step diffusion technique ', IEEE J. Quantum Electron., 1990, 26, (5), p. 837-842 10.1109/3.55524 0018-9197
9. Onishi, T., Inoue, K., Onozawa, K., Takayama, T., and Yuri, M.: ' High-power and high-temperature operation of Mg-doped AlGaInP-based red laser diodes ', IEEE J. Quantum Electron., 2004, 40, (12), p. 1634-1638 10.1109/JQE.2004.837323 0018-9197
10. Smowton, P.M., and Blood, P.: ' Visible emitting (AlGa)InP laser diodes ', Manasreh, M.O., Optoelectronic properties of semiconductors superlattices. Strained-layer quantum wells and their applications, (John Wiley and Sons, Gordon and Breach Science Publishers, Amsterdam, 1997), 4, 9, p. 431-487
11. Blood, P., Lewis, G.M., Smowton, P.M., Summers, H.D., Thomson, J.D., and Lutti, J.: ' Characterisation of semiconductor laser gain media by the segmented contact method ', IEEE J. Sel. Top. Quantum Electron., 2003, 9, (5), p. 1275-1282 10.1109/JSTQE.2003.819472 1077-260X
12. Hakki, B.W., and Paoli, T.L.: ' Gain spectra in GaAs double- heterostructure injection lasers ', J. Appl. Phys., 1975, 46, p. 1299-1306 10.1063/1.321696 0021-8979