Uniform and high-power characteristics of AlGaInP-based laser diodes with 4-inch-wafer process technology

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 13, Issue 5, 2007, Pages 1170-1175

  Sumitomo, Hiroyuki ^a   Kajiyama, Satoshi ^a   Oguri, Hiroyuki ^a   Sakashita, Takeshi ^a   Yamamoto, Toru ^a   Nakao, Kensei ^a   Domoto, Shinichi ^a   Ueda, Makoto ^a   Amano, Hidenori ^a   Satoyoshi, Hirotada ^a   Kita, Toshihiro ^a   Izumi, Shigekazu ^a  

^a Sumitomo Electric Device Innovations USA   (Japan)

Author keywords

AlGaInP; Four inch; High power; Semiconductor laser

Indexed keywords

HIGH TEMPERATURE PROPERTIES; SEMICONDUCTING ALUMINUM COMPOUNDS; THRESHOLD CURRENT DENSITY; WAFER BONDING; WAVELENGTH;

OPERATION CURRENTS; WAFER DEVIATION; WAFER PROCESS TECHNOLOGY;

SEMICONDUCTOR LASERS;

EID: 35349005869     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2007.903488     Document Type: Conference Paper

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