MOVPE growth of high quality AlN layers and effects of Si doping

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1774-1776

  Thapa, S B ^a   Hertkorn, J ^a   Scholz, F ^a   Prinz, G M ^a   Feneberg, M ^a   Schirra, M ^a   Thonke, K ^a   Sauer, R ^a   Biskupek, J ^a   Kaiser, U ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; ALN LAYERS; C-PLANE SAPPHIRE SUBSTRATES; CRYSTAL QUALITIES; DOPED SAMPLE; EPITAXIAL PROCESS; HIGH QUALITY; HRXRD; IN-PLANE; LOW TEMPERATURES; MOVPE; MOVPE GROWTH; N-TYPE CONDUCTIVITY; SI CONCENTRATION; SI-DOPING;

ACTIVATION ENERGY; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PHOTORESISTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

TENSILE STRAIN;

EID: 56249130140     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778634     Document Type: Conference Paper

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