Achieving conductive high Al-content AlGaN alloys for deep UV photonics

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6479, Issue , 2007, Pages

  Fan, Z Y ^a   Lin, J Y ^a   Jiang, H X ^a  

^a KANSAS STATE UNIVERSITY   (United States)

Author keywords

Activation energy; Conductivity; DUV photonics; III nitride wide bandgap semiconductors; Mg doped AlGaN; n AlGaN; p AlGaN; Si doped AlGaN; Zn doped AlN

Indexed keywords

ACTIVATION ENERGY; EPITAXIAL GROWTH; PHOTOLUMINESCENCE; PHOTONICS; SEMICONDUCTOR MATERIALS; ULTRAVIOLET RADIATION;

DEEP IMPURITY TRANSITIONS; DUV PHOTONICS; NITROGEN VACANCY; ROOM TEMPERATURE;

ALUMINUM ALLOYS;

EID: 34248663251     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.715046     Document Type: Conference Paper

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