Effect of dislocations on electrical and optical properties of n-type Al0.34Ga0.66 N

Applied Physics Letters

Volumn 93, Issue 19, 2008, Pages

  Chen, K X ^a   Dai, Q ^a   Lee, W ^b   Kim, J K ^b   Schubert, E F ^a,b   Grandusky, J ^c   Mendrick, M ^c   Li, X ^c   Smart, J A ^c  

^a Rensselaer Polytechnic Institute   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c Crystal IS Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CARRIER CONCENTRATION; CONCENTRATION (PROCESS); ELECTRIC PROPERTIES; GALLIUM; OPTICAL MATERIALS; OPTICAL PROPERTIES; SILICON; SINGLE CRYSTALS; STRESS INTENSITY FACTORS;

BLUE PHOTOLUMINESCENCES; EDGE AND SCREW DISLOCATIONS; EDGE DISLOCATION DENSITIES; EDGE DISLOCATIONS; EFFECT OF DISLOCATIONS; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL PROPERTIES; NONRADIATIVE RECOMBINATIONS; SI DOPING;

CARRIER MOBILITY;

EID: 56249125264     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3021076     Document Type: Article

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