Characteristics of Al2O3 gate dielectrics partially fluorinated by a low energy fluorine beam

Applied Physics Letters

Volumn 93, Issue 19, 2008, Pages

  Kim, Sung Woo ^a   Park, Byoung Jae ^a   Kang, Se Koo ^b   Kong, Bo Hyun ^a   Cho, Hyung Koun ^a   Yeom, Geun Young ^a,b,c   Heo, Sungho ^d   Hwang, Hyunsang ^d  

^a Sungkyunkwan University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c National Program for Tera Level Devices   (South Korea)

^d Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CHARGE TRAPPING; CHEMICAL REACTIONS; ELECTRIC PROPERTIES; FLUORINATION; FLUORINE; GATE DIELECTRICS; GATES (TRANSISTOR); HALOGENATION; LEAKAGE CURRENTS; MOS CAPACITORS; NITRIDES;

ALUMINUM OXIDES; BLOCKING LAYERS; CHARGE TRAPPING CHARACTERISTICS; ELECTRICAL PROPERTIES; LOW ENERGIES; MEMORY WINDOWS;

ALUMINUM;

EID: 56249113778     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2975183     Document Type: Article

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