MOVPE growth of InPSb/InAs heterostructures for mid-infrared emitters

Journal of Electronic Materials

Volumn 26, Issue 10, 1997, Pages 1221-1224

  Heuken, M ^a   Eichel Streiber, C V ^a   Behres, A ^a   Schineller, B ^a   Heime, K ^a   Mendorf, C ^b   Brockt, G ^b   Lakner, H ^b  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

InPSb; Metalorganic vapor phase epitaxy (MOVPE); Mid infrared emitters

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CRYSTAL LATTICES; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; THERMODYNAMIC STABILITY;

INFRARED EMITTERS; LATTICE MATCHING; TWO DIMENSIONAL ELECTRON GAS;

HETEROJUNCTIONS;

EID: 0031257423     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0023-x     Document Type: Article

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