Generation-recombination reduction in InAsSb photodiodes

Semiconductor Science and Technology

Volumn 21, Issue 12, 2006, Pages 1720-1723

  Carras, M ^a   Renard, C ^a   Marcadet, X ^a   Reverchon, J L ^b   Vinter, B ^b,d   Berger, V ^c  

^a ALCATEL THALES III V LAB   (France)

^b THALES RESEARCH AND TECHNOLOGY   (France)

^c UNIVERSITÉ PARIS DIDEROT   (France)

^d UNIVERSITÉ CÔTE D'AZUR   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; INFRARED DETECTORS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SPECTRUM ANALYSIS; TRANSPORT PROPERTIES;

ACTIVE REGIONS; ANTIMONIDES; INFRARED PHOTODIODES;

PHOTODIODES;

EID: 33846890209     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/12/037     Document Type: Article

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