InAsSb/InPSb strained-layer superlattice growth using metal-organic chemical vapor deposition

Journal of Crystal Growth

Volumn 211, Issue 1, 2000, Pages 400-404

  Biefeld, R M ^a   Phillips, J D ^a   Kurtz, S R ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; OPTICALLY PUMPED LASERS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICES; SUPERLATTICES; TEMPERATURE;

ROTATING DISK REACTOR; STRAINED LAYER SUPERLATTICES;

SEMICONDUCTOR GROWTH;

EID: 0033893990     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00822-2     Document Type: Article

References (5)

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2. Kurtz S.R., Allerman A.A., Biefeld R.M. Appl. Phys. Lett. 70:1997;3188.
3. Kurtz S.R., Allerman A.A., Biefeld R.M., Baucom K.C. Appl. Phys. Lett. 72:1998;2093.
4. Bewley W.W., Felix C.L., Vurgaftman I., Stokes D.W., Aifer E.H., Olafsen L.J., Meyer J.R., Yang M.J., Shanabrook B.V., Lee H., Martinelli R.U., Sugg A.R. Appl. Phys. Lett. 74:1999;1075.
5. Biefeld R.M., Baucom K.C., Kurtz S.R., Follstaedt D.M. J. Crystal Growth. 133:1993;38.