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Volumn 310, Issue 23, 2008, Pages 5016-5019
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Enhancement of electron mobility in ZnO layers with applying ultrasonic spray-assisted MOVPE and buffer layers
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Author keywords
A1. Impurities; A3. Metalorganic vapor phase epitaxy; B1. Oxide; B1. Zinc compounds
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Indexed keywords
BUFFER LAYERS;
CONCENTRATION (PROCESS);
CORUNDUM;
CRYSTAL GROWTH;
ELECTRIC PROPERTIES;
ELECTRON MOBILITY;
IMPURITIES;
METALLORGANIC VAPOR PHASE EPITAXY;
OPTICAL WAVEGUIDES;
PESTICIDES;
SEMICONDUCTING ZINC COMPOUNDS;
THICK FILMS;
TRANSITION METAL COMPOUNDS;
ULTRASONICS;
VAPORS;
ZINC;
ZINC ALLOYS;
ZINC COMPOUNDS;
ZINC OXIDE;
A1. IMPURITIES;
A3. METALORGANIC VAPOR PHASE EPITAXY;
B1. OXIDE;
B1. ZINC COMPOUNDS;
ELECTRICAL PROPERTIES;
ELECTRON CONCENTRATIONS;
GROWTH METHODS;
IONIZED IMPURITY SCATTERINGS;
LATTICE SCATTERINGS;
LIQUID SOURCES;
MASS PRODUCTIONS;
METAL ORGANIC;
PHASE REACTIONS;
RESIDUAL IMPURITIES;
RF-SPUTTERING;
ROOM TEMPERATURES;
SAPPHIRE SUBSTRATES;
SOURCE MATERIALS;
TEMPERATURE DEPENDENCES;
ULTRASONIC SPRAYS;
ZNO AND ZNMGO;
ZNO BUFFER LAYERS;
ZNO LAYERS;
LIQUID PHASE EPITAXY;
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EID: 56249086057
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.08.015 Document Type: Article |
Times cited : (5)
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References (22)
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