Effect of oxygen partial pressure on conductivity type of MgZnO nanocrystalline thin films prepared by metal-organic chemical vapor deposition

Microelectronics Journal

Volumn 39, Issue 12, 2008, Pages 1583-1586

  Shi, Zengliang ^a   Liu, Dali ^a   Yan, Xiaolong ^a   Gao, Zhongmin ^a   Bai, Shiying ^b  

^a JILIN UNIVERSITY   (China)

^b CHANGCHUN INSTITUTE OF APPLIED CHEMISTRY   (China)

Author keywords

Metal organic chemical vapor deposition; MgZnO; Oxygen partial pressure

Indexed keywords

ATOMIC SPECTROSCOPY; CONCENTRATION (PROCESS); ELECTRIC CURRENTS; GALVANOMAGNETIC EFFECTS; HALL EFFECT; HOLE CONCENTRATION; HOLE MOBILITY; INDUSTRIAL CHEMICALS; LIGHT EMISSION; LUMINESCENCE; MAGNETIC FIELD EFFECTS; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE MATERIALS; NANOSTRUCTURED MATERIALS; NONMETALS; OPTICAL PROPERTIES; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; OXYGEN; PARTIAL PRESSURE; PHOTODEGRADATION; POSITIVE IONS; SOLIDS; THICK FILMS; THIN FILMS; VAPORS;

ATOMIC FORCE MICROSCOPES; C -AXIS; CONDUCTION TYPES; CRYSTALLINITY; EFFECT OF OXYGENS; HALL EFFECT MEASUREMENTS; MGZNO; NANOCRYSTALLINE FILMS; NANOCRYSTALLINE THIN FILMS; ORGANIC CHEMICAL VAPOR DEPOSITIONS; OXYGEN CONTENTS; OXYGEN PARTIAL PRESSURE; OXYGEN PARTIAL PRESSURES; POLYCRYSTAL LINES;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 56049121250     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.03.013     Document Type: Article

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