New near-infrared defect luminescence in GaN doped with vanadium by ion implantation

Applied Physics Letters

Volumn 68, Issue 2, 1996, Pages 203-204

  Kaufmann, B ^a   Dornen A ^a   Harle V ^a   Bolay, H ^a   Scholz, F ^a   Pensl, G ^b  

^a UNIVERSITY OF STUTTGART   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; EPITAXIAL GROWTH; HEAT TREATMENT; ION IMPLANTATION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SPECTRUM ANALYSIS; VANADIUM; X RAY CRYSTALLOGRAPHY;

NEAR INFRARED DEFECT LUMINESCENCE; PHOTOLUMINESCENCE INTENSITY; SEMICONDUCTING GALLIUM NITRIDE; X RAY DIFFRACTION SPECTROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030574535     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116460     Document Type: Article

References (8)

1. J. Baur, K. Maier, M. Kunzer, U. Kaufmann, and J. Schneider, Appl. Phys. Lett. 64, 857 (1994).
2. J. Baur, U. Kaufmann, M. Kunzer, J. Schneider, H. Amano, I. Akasaki, T. Detchprom, and K. Hiramatsu, in Proceedings of the 18th International Conference on Defects in Semiconductors (ICDS 18), edited by K. Sumino and M. Suezawa (Trans Tech, Switzerland, in press).
3. R. Heitz, P. Thurian, I. Loa, L. Eckey, A. Hoffmann, I. Broser, K. Pressel, B. K. Meyer, and E. N. Mokhov, in Ref. 2.
4. V. Härle, H. Bolay, F. Steuber, B. Kaufmann, G. Reyher, A. Dörnen, F. Scholz, and K. F. Dombrowski, extended abstract of the 6th European Workshop on Metal-Organic Vapour-Phase Epitaxy and Related Growth Techniques, Gent, Belgium, 1995 (unpublished), B2.
5. B. Groh, G. Gerey, L. Bartha, and J. I. Pankove, Phys. Status Solidi A 26, 353 (1974).
6. F. P. Kesamanly, Fiz. Tekh. Polupprovodn. 8, 225 (1974), English translation in Sov. Phys. Semicond. 8, 147 (1974).
7. J. Schneider, H. D. Müller, K. Maier, W. Wilkening, F. Fuchs, A. Dörnen, S. Leibenzeder, and R. Stein, Appl. Phys. Lett. 56, 1184 (1990).
8. The line appears in GaN and AlN layers, both grown on sapphire substrate, at exactly the same position. In as-grown samples it appears alone, even if none of the other transitions in Fig. 2 is observed. Thus it is likely to be correlated to an impurity in the sapphire substrate.