Effect of thermal treatment on the electrical properties of the sol-gel-derived (Zr,Sn)TiO4 thin films

Ceramics International

Volumn 35, Issue 1, 2009, Pages 77-81

  Yang, Ru Yuan ^a   Kuan, Hon ^b   Weng, Min Hang ^c   Ho, Yung Shou ^d  

^a NATIONAL PINGTUNG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^d FOOYIN UNIVERSITY   (Taiwan)

Author keywords

(Zr0.8,Sn0.2)TiO4; Leakage current; Microstructure; Sol gel; Thin film

Indexed keywords

ACTIVATION ENERGY; ARRHENIUS PLOTS; COLLOIDS; CONDUCTIVE FILMS; ELECTRIC PROPERTIES; GELATION; GELS; HEAT TREATMENT; HEATING; MICROSTRUCTURE; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SOL-GEL PROCESS; SOL-GELS; SOLS; SOLVENTS; THICK FILMS; THIN FILMS; TIN; X RAY ANALYSIS; ZIRCONIUM;

(ZR0.8,SN0.2)TIO4; APPLIED VOLTAGES; CONDUCTIVE ATOMIC FORCE MICROSCOPES; ELECTRICAL PROPERTIES; HEATING TEMPERATURES; SI SUBSTRATES; SOL-GEL; THERMAL TREATMENTS; X-RAY DIFFRACTIONS;

LEAKAGE CURRENTS;

EID: 55949131785     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2007.09.108     Document Type: Article

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