High-performance poly-Si TFTs with fully Ni-self-aligned silicided S/D and gate structure

IEEE Electron Device Letters

Volumn 27, Issue 4, 2006, Pages 258-261

  Kuo, Po Yi ^a   Chao, Tien Sheng ^a   Wang, Ren Jie ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Floating body effect; Fully salicided; Parasitic bipolar junction transistor; Polycrystalline silicon thin film transistors (poly Si TFTs)

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRIC POTENTIAL; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS;

FLOATING-BODY EFFECT; FULLY SALICIDED; GATE STRUCTURE; PARASITIC BIPOLAR JUNCTION TRANSISTOR;

THIN FILM TRANSISTORS;

EID: 33645638134     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.870417     Document Type: Article

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