Deep salicidation using nickel for suppressing the floating body effect in partially depleted SOI-MOSFET

IEEE International SOI Conference

Volumn , Issue , 1996, Pages 78-79

  Deng, F ^a   Johnson, R A ^a   Dubbelday, W B ^a   Garcia, G A ^a   Asbeck, P M ^a   Lau, S S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC BREAKDOWN OF SOLIDS; SILICON ON INSULATOR TECHNOLOGY; THIN FILMS;

DEEP SALICIDATION; FLOATING BODY EFFECTS;

MOSFET DEVICES;

EID: 0030410185     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)