MOVPE growth of In-rich InxGa1-xN (0.5 (4) Yamamoto, A a Nakagawa, Y a Sugiura, T a Hashimoto, A a a UNIVERSITY OF FUKUI (Japan)

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 237-241

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; THERMAL EFFECTS; X RAY DIFFRACTION;

X RAY DIFFRACTION PATTERNS;

SEMICONDUCTING FILMS;

EID: 0033221995     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<237::AID-PSSA237>3.0.CO;2-M     Document Type: Article

References (5)

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3. N. A. EL-MASRY, E. L. PINER, S. X. LIU, and S. M. BEDAIR, Appl. Phys. Lett. 72, 40 (1998).
4. A. KOUKITSU and H. SEKI, J. Cryst. Growth 189/190, 13 (1998).
5. A. HASHIMOTO, T. MOTIZUKI, Y. KURUMI, and A. YAMAMOTO, J. Cryst. Growth 189/190, 259 (1998).