Transport mechanism in high resistive silicon carbide heterostructures

Applied Surface Science

Volumn 184, Issue 1-4, 2001, Pages 144-149

  Louro, P ^a   Vieira, M ^a   Vygranenko, Yu ^a   Fernandes, M ^a   Schwarz, R ^a   Schubert, M ^b  

^a INSTITUTO SUPERIOR DE ENGENHARIA DE LISBOA   (Portugal)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Heterostructures; Numerical simulation; Optical bias; Optoelectronic properties

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; HETEROJUNCTIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR JUNCTIONS; SPECTRUM ANALYSIS; TRANSPORT PROPERTIES;

DRIFT-DIFFUSION; PHOTOGENERATION;

SILICON CARBIDE;

EID: 0035852183     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00488-3     Document Type: Article

References (6)

1. The electrical characterization of semiconductors: Majority carriers and electron state