Characterization of epitaxial silicon germanium thin films by spectroscopic ellipsometry

Thin Solid Films

Volumn 313-314, Issue , 1998, Pages 237-242

  Ygartua, Carlos ^a   Liaw, Ming ^b  

^a KLA TENCOR CORPORATION   (United States)

^b MOTOROLA INC   (United States)

Author keywords

Epitaxial silicon germanium; Refractive index; Spectroscopic ellipsometry

Indexed keywords

ELLIPSOMETRY; EPITAXIAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; REFRACTIVE INDEX; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; THIN FILMS;

SPECTROSCOPIC ELLIPSOMETRY;

SEMICONDUCTING FILMS;

EID: 17544398033     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00825-0     Document Type: Article

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