메뉴 건너뛰기




Volumn , Issue , 2006, Pages 679-686

Technologies for (sub-) 45nm analog/RF CMOS - circuit design opportunities and challenges

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER ARCHITECTURE; ELECTRIC NETWORK ANALYSIS; ELECTRIC POTENTIAL;

EID: 39049101399     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CICC.2006.320879     Document Type: Conference Paper
Times cited : (9)

References (12)
  • 1
    • 39049110522 scopus 로고    scopus 로고
    • http://public.itrs.net
  • 2
    • 0042527442 scopus 로고    scopus 로고
    • Trends in the ultimate breakdown strength of high-dielectric constant materials
    • August
    • J. McPherson et al., "Trends in the ultimate breakdown strength of high-dielectric constant materials", IEEE Trans. Electron Devices, Vol. 50, No. 8, pp. 1771-1778, August 2003.
    • (2003) IEEE Trans. Electron Devices , vol.50 , Issue.8 , pp. 1771-1778
    • McPherson, J.1
  • 3
    • 39049146462 scopus 로고    scopus 로고
    • http://www.semiconductors.philips.com/Philips_Models/mos_models/psp
  • 4
    • 33947199201 scopus 로고    scopus 로고
    • Device and circuit-level analog performance trade-offs: A comparative study of planar bulk FETs versus FinFETS
    • V. Subramanian et al., "Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETS", Proceedings IEDM 2005, pp. 919-922, 2005.
    • (2005) Proceedings IEDM 2005 , pp. 919-922
    • Subramanian, V.1
  • 5
    • 34250680414 scopus 로고    scopus 로고
    • Stochastic matching properties of FinFETs
    • submitted to Electron Device Letters
    • C. Gustin et al., "Stochastic matching properties of FinFETs", submitted to Electron Device Letters, 2006.
    • (2006)
    • Gustin, C.1
  • 7
    • 0042532317 scopus 로고    scopus 로고
    • Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness
    • A. Asenov, S. Kaya and A.R. Brown, "Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness", IEEE Trans. Electron Devices, Vol. 50, no. 5, pp. 1254-1260, 2003.
    • (2003) IEEE Trans. Electron Devices , vol.50 , Issue.5 , pp. 1254-1260
    • Asenov, A.1    Kaya, S.2    Brown, A.R.3
  • 8
    • 33751436849 scopus 로고    scopus 로고
    • Mixed Signal and noise properties of NMOSFETs with HfSiON/TaN gate stack
    • Z.M. Rittersma et al., "Mixed Signal and noise properties of NMOSFETs with HfSiON/TaN gate stack", Proceedings ESSDERC 2005, pp. 105-108, 2005.
    • (2005) Proceedings ESSDERC 2005 , pp. 105-108
    • Rittersma, Z.M.1
  • 9
    • 33749488721 scopus 로고    scopus 로고
    • Geometry dependence of 1/f noise in n-channel and p-channel MuGFETs
    • V. Subramanian et al., "Geometry dependence of 1/f noise in n-channel and p-channel MuGFETs", Proceedings ICNF 2005, pp. 279-282, 2005.
    • (2005) Proceedings ICNF 2005 , pp. 279-282
    • Subramanian, V.1
  • 10
    • 33751214764 scopus 로고    scopus 로고
    • Dependence of FinFET RF performance on fin width
    • D. Lederer et al., "Dependence of FinFET RF performance on fin width", Proceedings SiRF, pp. 8-11, 2006.
    • (2006) Proceedings SiRF , pp. 8-11
    • Lederer, D.1
  • 11
    • 39049095614 scopus 로고    scopus 로고
    • W. Jeamsaksiri et al., A low-cost 90nm RF CMOS platform for record RF circuit performance, Digest of Techn. Papers, IEEE 2005 Symp. On VLSI Technology, pp. 60-61, June 2005. [12] C. Pacha et al., Circuit design issues in Multi-gate FET CMOS technologies, Proceedings ISSCC, pp. 420-421, 2006.
    • W. Jeamsaksiri et al., "A low-cost 90nm RF CMOS platform for record RF circuit performance", Digest of Techn. Papers, IEEE 2005 Symp. On VLSI Technology, pp. 60-61, June 2005. [12] C. Pacha et al., "Circuit design issues in Multi-gate FET CMOS technologies", Proceedings ISSCC, pp. 420-421, 2006.
  • 12
    • 33847113303 scopus 로고    scopus 로고
    • Low-power low-noise highly ESD robust LNA, and VCO design using Above-IC inductors
    • pp, Oct
    • D. Linten et al., "Low-power low-noise highly ESD robust LNA, and VCO design using Above-IC inductors", IEEE Custom Integrated Circuits Conference", pp. 497-500, Oct. 2005.
    • (2005) IEEE Custom Integrated Circuits Conference , pp. 497-500
    • Linten, D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.