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Volumn 123-124, Issue , 2005, Pages 640-645
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Etch-stop characteristics of heavily B/Ge-doped silicon epilayer in KOH and TMAH
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Author keywords
Activation energy; Etch rate; Etch stop; KOH; TMAH; Wet etch
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Indexed keywords
ACTIVATION ENERGY;
AMMONIUM COMPOUNDS;
BORON;
DOPING (ADDITIVES);
GERMANIUM;
POTASSIUM COMPOUNDS;
ETCH RATE;
ETCH-STOP;
KOH;
TMAH;
WET ETCH;
SILICON;
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EID: 24944526094
PISSN: 09244247
EISSN: None
Source Type: Journal
DOI: 10.1016/j.sna.2005.01.034 Document Type: Conference Paper |
Times cited : (8)
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References (10)
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