Salicides for 0.10 μm gate lengths: A comparative study of one-step RTP Ti with Mo doping, Ti with pre-amorphization and Co processes

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1997, Pages 103-104

  Kittl, Jorge A ^a   Hong, Qi Zhong ^a   Chao, Chih Ping ^a   Chen, Ih Chin ^a   Yu, Ning ^a   O'Brien, Sean ^a   Hanratty, Maureen ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; COBALT; ELECTRIC RESISTANCE MEASUREMENT; GATES (TRANSISTOR); MOLYBDENUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS; TITANIUM;

GATE SHEET RESISTANCE; SALICIDE PROCESS;

CMOS INTEGRATED CIRCUITS;

EID: 0030699856     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)