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Volumn 47, Issue 3, 2004, Pages 422-428

Manufacturing process of flat display

Author keywords

Flat display; Poly silicon; Radical reaction; TFT

Indexed keywords

ANNEALING; ELECTRIC POWER DISTRIBUTION; ELECTROLUMINESCENCE; INTERNET; LIQUID CRYSTALS; PERSONAL COMPUTERS; POLYSILICON;

EID: 5544256602     PISSN: 13408054     EISSN: None     Source Type: Journal    
DOI: 10.1299/jsmeb.47.422     Document Type: Article
Times cited : (14)

References (18)
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    • Hirayama, M., Sekine, K., Saito, Y. and Ohmi, T., Low-Temperature Growth of High-Integrity Silicon Oxide Films by Oxygen Radical Generated in High-Density Krypton Plasma, Technical Digest, International Electron Devices Meeting, Washington, D.C., (1999), pp.249-252.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.