Low temperature growth (400 °C) of high-integrity thin silicon-oxynitride films by microwave-excited high density Kr/O2/NH3 plasma

IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings

Volumn 2002-January, Issue , 2002, Pages 166-169

  Ohtsubo, Kazuo ^a   Saito, Yuji ^a   Hirayama, Masaki ^a   Sugawa, Shigetoshi ^a   Abaroni, Herzl ^a,b   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

NITRIDES; SILICON NITRIDE; TEMPERATURE;

DIRECT TUNNELING; FOWLER-NORDHEIM; LOW TEMPERATURE GROWTH; OXYNITRIDES; PLASMA SYSTEMS; SILICON OXYNITRIDE FILMS; TUNNELING REGIME;

FILM GROWTH;

EID: 5544250676     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EEEI.2002.1178381     Document Type: Conference Paper

References (12)

1. G. Lucovsky, H. Niimi, Y. Wu, C, R. Parker and J. R. Hauser, "Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing", J. Vac. Sci. & Tecbnol., A 16(3), pp. 1721-1729, 1998.
2. M. Togo, K. Watanabe, T. Yamamoto, N. Ikarashi, K. Shiba, T. Tatsumi, H. Ono and T. Mogami, "LowLeakage and Highly-Reliable 1.5nm SiON Gate-Dielectric Using Radical Oxynitridation for Sub-0.1 μm CMOS", Symplon VLSI Tech., pp. 116-117, 2000.
3. 2O-Oxyhitrided Tunnel Oxides for Flash'Memory", Ext. Abstr; Int. Conf. on Solid State Device and Materials (SSDM), pp. 859-861, 1994.
4. Y. Okada, P. J. Tobin, K. G. Reid, R. I. Hegde, B. Maiti and S. A. Ajuria, "Furnace Grown Gate Oxynitride Using Nitric Oxide (NO)", IEEE Trans. Electron Devices; Vol. 41, No. 9, pp. 1608-1613, 1994.
5. 2O Ambient", Ext. 'Abstr; Int. Conf. on Solid State Device and Materials (SSDM), pp. 159-162, 1990.
6. M. Hirayama, K. Sekine, Y. Saito and T. Ohmi, "Low-Temperature Growth of High-Integrity Silicon Oxide Films by Oxygen Radical Generated in High-Density Krypton Plasma", Tech. Dig. Int. Electron Device Meet., pp. 249-252, 1999.
7. T. Ohmi, "New Paradigm in Semiconductor Industry", Ultra Clean Technology, Vol. 11, Supplement 1, pp. E13-E15, 1999.
8. 2/Si Interface" Tech. Dig, Int. Electron Device Meet., pp. 593-596, 1998.
9. 3Plasma" Ext. Abstr; Int. Conf on-Soiid State Device and Materials (SSDM), 2001.
10. 2", J. Appl. Phys., Vol. 40, pp. 278, 1969.
11. S. M. Sze, "Physics of Semiconductor Devices", John Wiley, p. 852, 1981
12. T. P. Ma, "Making Silicon Nitride Film a Viable Gate Dielectric", IEEE Trans. Electron Devices, Vol. 45,;No. 3, pp. 680-690, 1998.