Improvement of MOSFET subthreshold leakage current by its irradiation with hydrogen radicals generated in microwave-excited high-density inert gas plasma

IEEE International Reliability Physics Symposium Proceedings

Volumn 2001-January, Issue , 2001, Pages 319-326

  Saito, Y ^a   Takahashi, H ^a   Ohtsubo, K O ^a   Hirayama, M ^a   Sugawa, S ^a   Aharoni, H ^a,b   Ohmi, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

Author keywords

Gases; Hydrogen; Microwave generation; MOSFET circuits; Plasma applications; Plasma devices; Plasma measurements; Plasma properties; Subthreshold current; Surface cleaning

Indexed keywords

DENSITY OF GASES; GASES; HYDROGEN; HYDROGEN PRODUCTION; INERT GASES; LEAKAGE CURRENTS; MICROWAVE GENERATION; MICROWAVE IRRADIATION; MOSFET DEVICES; PLASMA APPLICATIONS; PLASMA DEVICES; SURFACE CLEANING;

GAS PLASMA; HYDROGEN RADICAL; MOSFET CIRCUITS; PLASMA MEASUREMENT; PLASMA PROPERTIES; PRODUCTION OF HYDROGEN; SUB-THRESHOLD CURRENT; SUB-THRESHOLD LEAKAGE CURRENTS;

PLASMA DIAGNOSTICS;

EID: 5544252429     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2001.922922     Document Type: Conference Paper

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