SCOPUS 정보 검색 플랫폼

Volumn 47, Issue 10 PART 2, 2008, Pages 8174-8177

Growth of dielectric A12O3 films by atomic layer deposition

a IMEM CNR (Italy)

b ITC IRST (Italy)

Author keywords

Al2O3; ALD; C V; High k dielectric; I V; TEM

Indexed keywords

ALUMINUM; COMPUTER APPLICATIONS; DIELECTRIC MATERIALS; PERSONAL COMPUTERS; PULSED LASER DEPOSITION; SILICON;

AL2O3; ALD; C-V; HIGH-K DIELECTRIC; I-V; TEM; AI2O3; J-V;

ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS;

EID: 55349138750 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.47.8174 Document Type: Article

Times cited : (3)

References (14)

1
- 2142852262
- P. J. Kelly and R. D. Arnell: J. Vac. Sci. Technol. A 17 (1999) 945.
- (1999) J. Vac. Sci. Technol. A , vol.17 , pp. 945
- Kelly, P.J.¹ Arnell, R.D.²

2
- 0036567721
- L. G. Gosset, J. F. Damlencourt, O. Renault, D. Rouchon, P. Holliger, A. Ermolieff, I. Trimaille, J. J. Ganem, F. Martin, and M. N. Semeria: J. Non-Cryst. Solids 303 (2002) 17.
- (2002) J. Non-Cryst. Solids , vol.303 , pp. 17
- Gosset, L.G.¹ Damlencourt, J.F.² Renault, O.³ Rouchon, D.⁴ Holliger, P.⁵ Ermolieff, A.⁶ Trimaille, I.⁷ Ganem, J.J.⁸ Martin, F.⁹ Semeria, M.N.¹⁰

3
- 0037166522
- M. D. Groner, J. W. Elam, F. H. Fabreguette, and S. M. George: Thin Solid Films 413 (2002) 186.
- (2002) Thin Solid Films , vol.413 , pp. 186
- Groner, M.D.¹ Elam, J.W.² Fabreguette, F.H.³ George, S.M.⁴

4
- 33745744207
- H. C. Lin, P. D. Ye, and G. D. Wilk: Solid-State Electron. 50 (2006) 1012.
- (2006) Solid-State Electron , vol.50 , pp. 1012
- Lin, H.C.¹ Ye, P.D.² Wilk, G.D.³

5
- 33751571646
- M. Avice, U. Grossner, I. Pintilie, B. G. Svensson, O. Nilsen, and H. Fjellvag: Appl. Phys. Lett. 89 (2006) 222103.
- (2006) Appl. Phys. Lett , vol.89 , pp. 222103
- Avice, M.¹ Grossner, U.² Pintilie, I.³ Svensson, B.G.⁴ Nilsen, O.⁵ Fjellvag, H.⁶

6
- 21744444606
- R. L. Puurunen: J. Appl. Phys. 97 (2005) 121301.
- (2005) J. Appl. Phys , vol.97 , pp. 121301
- Puurunen, R.L.¹

7
- 0037657438
- S. Jakschik, U. Schroeder, T. Hecht, D. Krueger, G. Dollinger, A. Bergmaier, C. Luhmann, and J. W. Bartha: Appl. Surf. Sci. 211 (2003) 352.
- (2003) Appl. Surf. Sci , vol.211 , pp. 352
- Jakschik, S.¹ Schroeder, U.² Hecht, T.³ Krueger, D.⁴ Dollinger, G.⁵ Bergmaier, A.⁶ Luhmann, C.⁷ Bartha, J.W.⁸

8
- 1242320224
- M. D. Groner, F. H. Fabreguette, J. W. Elam, and S. M. George: Chcm. Mater. 16 (2004) 639.
- (2004) Chcm. Mater , vol.16 , pp. 639
- Groner, M.D.¹ Fabreguette, F.H.² Elam, J.W.³ George, S.M.⁴

9
- 33645719096
- S. K. Kim, S. W. Lee, C. S. Hwang, Y. S. Min, J. Y. Won, and J. Jeong: J. Electrochem. Soc. 153 (2006) F69.
- (2006) J. Electrochem. Soc , vol.153
- Kim, S.K.¹ Lee, S.W.² Hwang, C.S.³ Min, Y.S.⁴ Won, J.Y.⁵ Jeong, J.⁶

10
- 0034229422
- R. L. Puurunen, A. Root, S. Haukka, E. I. Iiskola, M. Lindblad, and A. O. I. Krause: J. Phys. Chem. B 104 (2000) 6599.
- (2000) J. Phys. Chem. B , vol.104 , pp. 6599
- Puurunen, R.L.¹ Root, A.² Haukka, S.³ Iiskola, E.I.⁴ Lindblad, M.⁵ Krause, A.O.I.⁶

11
- 0037391773
- Q. Y. Shao, A. D. Li, H. Q. Ling, D. Wu, Y. Wang, Y. Feng, S. Z. Yang, Z. G. Liu, M. Wang, and N. B. Ming: Microelectron. Eng. 66 (2003) 842.
- (2003) Microelectron. Eng , vol.66 , pp. 842
- Shao, Q.Y.¹ Li, A.D.² Ling, H.Q.³ Wu, D.⁴ Wang, Y.⁵ Feng, Y.⁶ Yang, S.Z.⁷ Liu, Z.G.⁸ Wang, M.⁹ Ming, N.B.¹⁰

12
- 0001470318
- J. Y. Kim, M. S. Hwang, Y. H. Kim, H. J. Kim, and Y. Lee: J. Appl. Phys. 90 (2001) 2469.
- (2001) J. Appl. Phys , vol.90 , pp. 2469
- Kim, J.Y.¹ Hwang, M.S.² Kim, Y.H.³ Kim, H.J.⁴ Lee, Y.⁵

13
- 55349108305
- Marseille, France, May 20-25
- E. Ghiraldelli, C. Pelosi, E. Gombia, G. Chiavarotti, and L. Vanzetti: 5th Int. Conf. Silicon Epitaxy and Heterostructures, Marseille, France, May 20-25, 2007, p. 449.
- (2007) 5th Int. Conf. Silicon Epitaxy and Heterostructures , pp. 449
- Ghiraldelli, E.¹ Pelosi, C.² Gombia, E.³ Chiavarotti, G.⁴ Vanzetti, L.⁵

14
- 4344595811
- S. K. Kim and C. S. Hwang: J. Appl. Phys. 96 (2004) 2323.
- (2004) J. Appl. Phys , vol.96 , pp. 2323
- Kim, S.K.¹ Hwang, C.S.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.